New strategy for local diffusion of dopants in crystalline silicon

Transient-Enhanced Diffusion in Shallow-Junction Formation

Current methods for forming junctions in the source and drain regions of complementary metaloxide semiconductor (CMOS) transistor circuits use low-energy ion implantation and rapid thermal annealing (RTA). Spike annealing, with fast ramping and short dwell time at maximum temperature, has been shown to be advantageous for shallow-junction formation. Diffusion and electrical activation of implan...

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...

THE THERMAL EQUILIBRIUM OF POINT DEFECTS For a precise prediction of dopant profiles in silicon the understanding of the influence of thermal oxidation on the diffusion of dopants

Transport spectroscopy of coupled donors in silicon nano-transistors

The impact of dopant atoms in transistor functionality has significantly changed over the past few decades. In downscaled transistors, discrete dopants with uncontrolled positions and number induce fluctuations in device operation. On the other hand, by gaining access to tunneling through individual dopants, a new type of devices is developed: dopant-atom-based transistors. So far, most studies...

Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon

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